January 2014 Vol. 2 No. 1

Abstract
• Full text
•Reprint (PDF) (1266 KB)

Search Pubmed for articles by:
 

Full Length Research Paper

SiC substrate dependence epitaxial graphene growth: Effect of growth temperature and substrate off-cut angle

Dr. B. K. Daas

Department of Electrical and Computer Engineering, University of South Carolina, 301 S. Main St, Columbia, SC 29208, USA

E-mail: biplobdaas_121@yahoo.com

Accepted September 09, 2013

Abstract

We present epitaxial graphene (EG) growth on SiC substrate using solid-state decomposition method. The material characteristics are verified using Raman while surface topography analysis is done using AFM. Our investigation indicates that with the increasing growth temperature on SiC substrate, Si face steps become prominent while C-faces wrinkles starts invisible in EG layers due to thicker layer. This indicates step-flow mediated growth on Si face while C face has both step flow and C nucleation. Through validating step-flow growth on Si face, shows offcut dependency surface morphology while graphene quality is intact.

Keywords: 6H-SiC, off-cut, Epitaxial Graphene.